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? semiconductor components industries, llc, 2012 july, 2012 ? rev. 2 1 publication order number: nst3946dxv6t1/d NST3946DXV6T1G, nst3946dxv6t5g complementary general purpose transistor the nst3946dxv6t1 device is a spin-off of our popular sot ? 23/sot ? 323 three-leaded device. it is designed for general purpose amplifier applications and is housed in the sot ? 563 six-leaded surface mount package. by putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. ? h fe , 100 ? 300 ? low v ce(sat) , 0.4 v ? simplifies circuit design ? reduces board space ? reduces component count ? these devices are pb-free, halogen free/bfr free and are rohs compliant table 1. maximum ratings rating symbol value unit collector ? emitter voltage (npn) (pnp) v ceo 40 ? 40 vdc collector ? base voltage (npn) (pnp) v cbo 60 ? 40 vdc emitter ? base voltage (npn) (pnp) v ebo 6.0 ? 5.0 vdc collector current ? continuous (npn) (pnp) i c 200 ? 200 madc electrostatic discharge esd hbm>16000, mm>2000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. sot ? 563 case 463a q 1 (1) (2) (3) (4) (5) (6) q 2 nst3946dxv6t1* ordering information *q1 pnp q2 npn http://onsemi.com 46 = specific device code m = date code = pb-free package marking diagram 46 m device package shipping ? NST3946DXV6T1G sot ? 563 (pb-free) 4,000/tape & reel nst3946dxv6t5g sot ? 563 (pb-free) 8,000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. (note: microdot may be in either location)
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 2 table 2. thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance junction-to-ambient r ja 350 (note 1) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 500 (note 1) 4.0 (note 1) mw mw/ c thermal resistance junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr ? 4 @ minimum pad electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 2) (i c = 1.0 madc, i b = 0) (npn) (i c = ? 1.0 madc, i b = 0) (pnp) v (br)ceo 40 ? 40 ? ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) (npn) (i c = ? 10 adc, i e = 0) (pnp) v (br)cbo 60 ? 40 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) (npn) (i e = ? 10 adc, i c = 0) (pnp) v (br)ebo 6.0 ? 5.0 ? ? vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) (npn) (v ce = ? 30 vdc, v eb = ? 3.0 vdc) (pnp) i bl ? ? 50 ? 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) (npn) (v ce = ? 30 vdc, v eb = ? 3.0 vdc) (pnp) i cex ? ? 50 ? 50 nadc on characteristics (note 2) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (npn) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) (i c = ? 0.1 madc, v ce = ? 1.0 vdc) (pnp) (i c = ? 1.0 madc, v ce = ? 1.0 vdc) (i c = ? 10 madc, v ce = ? 1.0 vdc) (i c = ? 50 madc, v ce = ? 1.0 vdc) (i c = ? 100 madc, v ce = ? 1.0 vdc) h fe 40 70 100 60 30 60 80 100 60 30 ? ? 300 ? ? ? ? 300 ? ? ? collector ? emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (npn) (i c = 50 madc, i b = 5.0 madc) (i c = ? 10 madc, i b = ? 1.0 madc) (pnp) (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? ? 0.2 0.3 ? 0.25 ? 0.4 vdc base ? emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (npn) (i c = 50 madc, i b = 5.0 madc) (i c = ? 10 madc, i b = ? 1.0 madc) (pnp) (i c = ? 50 madc, i b = ? 5.0 madc) v be(sat) 0.65 ? ? 0.65 ? 0.85 0.95 ? 0.85 ? 0.95 vdc
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit small- signal characteristics current ? gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) (npn) (i c = ? 10 madc, v ce = ? 20 vdc, f = 100 mhz) (pnp) f t 300 250 ? ? mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) (npn) (v cb = ? 5.0 vdc, i e = 0, f = 1.0 mhz) (pnp) c obo ? ? 4.0 4.5 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) (npn) (v eb = ? 0.5 vdc, i c = 0, f = 1.0 mhz) (pnp) c ibo ? ? 8.0 10.0 pf input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) (pnp) h ie 1.0 2.0 10 12 k voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) (pnp) h re 0.5 0.1 8.0 10 x 10 ? 4 small ? signal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) (pnp) h fe 100 100 400 400 ? output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) (pnp) h oe 1.0 3.0 40 60 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k , f = 1.0 khz) (npn) (v ce = ? 5.0 vdc, i c = ? 100 adc, r s = 1.0 k , f = 1.0 khz) (pnp) nf ? ? 5.0 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc) (npn) (v cc = ? 3.0 vdc, v be = 0.5 vdc) (pnp) t d ? ? 35 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) (npn) (i c = ? 10 madc, i b1 = ? 1.0 madc) (pnp) t r ? ? 35 35 storage time (v cc = 3.0 vdc, i c = 10 madc) (npn) (v cc = ? 3.0 vdc, i c = ? 10 madc) (pnp) t s ? ? 200 225 ns fall time (i b1 = i b2 = 1.0 madc) (npn) (i b1 = i b2 = ? 1.0 madc) (pnp) t f ? ? 50 75 2. pulse test: pulse width 300 s; duty cycle 2.0%.
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 4 (npn) figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 c ibo c obo (npn)
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 5 (npn) figure 4. turn-on time i c , collector current (ma) 70 100 200 300 500 50 figure 5. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 6. storage time i c , collector current (ma) figure 7. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s - 1 / 8 t f i b1 = i b2 (npn) (npn) (npn) (npn) typical audio small- signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 8. noise figure f, frequency (khz) 4 6 8 10 12 2 0.1 figure 9. noise figure r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a (npn) (npn )
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 6 (npn) h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 10. current gain i c , collector current (ma) 70 100 200 300 50 figure 11. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 12. input impedance i c , collector current (ma) figure 13. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 (npn) (npn) (npn) (npn) figure 14. safe operating area v ce , collector emitter voltage (v) 1 1 10 100 10 100 1000 i c , collector current (ma) single pulse test at t a = 25 c (npn) 1 s 1 ms 1 s 10 ms 100 ms
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 7 (npn) typical static characteristics figure 15. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c (npn) figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma (npn) figure 17. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 18. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) (npn) (npn)
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 8 (pnp) figure 19. delay and rise time equivalent test circuit figure 20. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 21. capacitance reverse bias (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 c ibo c obo (pnp) figure 22. turn-on time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 figure 23. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v (pnp) (pnp) t j = 25 c t j = 125 c
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 9 (pnp) typical audio small- signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 24. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 25. r g , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a (pnp) (pnp) h parameters (v ce = ? 10 vdc, f = 1.0 khz, t a = 25 c) figure 26. current gain i c , collector current (ma) 70 100 200 300 50 figure 27. output admittance i c , collector current (ma) h , dc current gain h , output admittance ( mhos) figure 28. input impedance i c , collector current (ma) figure 29. voltage feedback ratio i c , collector current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0 h , voltage feedback ratio (x 10 ) re -4 (pnp) (pnp) (pnp) (pnp)
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 10 (pnp) typical static characteristics figure 30. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c (pnp) figure 31. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma (pnp) figure 32. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 33. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) , temperature coefficients (mv/ c) v (pnp) (pnp)
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 11 figure 34. safe operating area v ce , collector emitter voltage (v) 1 1 10 100 10 100 1000 i c , collector current (ma) single pulse test at t a = 25 c (pnp) 1 s 1 s 100 ms 1 ms 10 ms
NST3946DXV6T1G, nst3946dxv6t5g http://onsemi.com 12 package dimensions sot ? 563, 6 lead case 463a issue f h e dim min nom max millimeters a 0.50 0.55 0.60 b 0.17 0.22 0.27 c d 1.50 1.60 1.70 e 1.10 1.20 1.30 e 0.5 bsc l 0.10 0.20 0.30 1.50 1.60 1.70 0.020 0.021 0.023 0.007 0.009 0.011 0.059 0.062 0.066 0.043 0.047 0.051 0.02 bsc 0.004 0.008 0.012 0.059 0.062 0.066 min nom max inches e m 0.08 (0.003) x b 6 5 pl a c ? x ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 6 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e 0.08 0.12 0.18 0.003 0.005 0.007 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nst3946dxv6t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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